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| Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Features * Allowing supply with the radial taping * High transition frequency fT * Optimum for high-density mounting Unit: mm 4.00.2 (0.8) 3.00.2 2.00.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -20 -5 -30 -60 300 150 -55 to +150 Unit V V V mA mA mW C C 1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1 15.60.5 (0.8) 0.75 max. 7.6 1 : Emitter 2 : Collector 3 : Base NS-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Base-emitter saturation voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol VBE ICBO ICEO IEBO hFE VCE(sat) fT NF Zrb Cre Conditions VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VEB = -5 V, IC = 0 VCE = -10 V, IC = -1 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 1 mA, f = 5 MHz VCB = -10 V, IE = 1 mA, f = 2 MHz VCB = -10 V, IE = 1 mA, f = 10.7 MHz Min Typ - 0.7 Max - 0.1 -100 -10 Unit V A A A V MHz 70 - 0.1 150 300 2.8 22 1.2 220 Collector-emitter saturation voltage Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance (Common-emitter) 4.0 50 2.0 dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 140 C 110 to 220 Publication date: March 2003 SJC00018BED 1 2SA1323 PC Ta 500 -24 IC VCE Ta = 25C IB = -250 A -200 A -150 A -12 -100 A -60 IC VBE VCE = -10 V Collector power dissipation PC (mW) 400 -20 -50 Collector current IC (mA) Collector current IC (mA) -16 -40 25C -30 Ta = 75C -25C 300 200 -8 -20 100 -4 -50 A -10 0 0 40 80 120 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 120 hFE IC VCE = -10 V 400 fT I E Ta = 25C VCB = -10 V Forward current transfer ratio hFE -10 Transition frequency fT (MHz) -10 -100 100 Ta = 75C 300 80 25C -25C -1 Ta = 75C 25C -25C 60 200 40 - 0.1 100 20 - 0.01 - 0.1 -1 -10 -100 0 - 0.1 -1 0 0.1 1 10 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 5 Cre VCE Reverse transfer capacitance Cre (pF) (Common emitter) f = 1 MHz IE = 0 Ta = 25C GP I C 24 VCE = -10 V f = 100 MHz Ta = 25C 6 4 5 IC = -1 mA f = 10.7 MHz Ta = 25C 20 4 Power gain GP (dB) -10 -100 16 3 3 12 2 2 8 1 1 4 0 -1 -10 -100 0 -1 0 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) Collector current IC (mA) 2 SJC00018BED 2SA1323 NF IE 6 VCB = -10 V f = 100 MHz Ta = 25C 5 Noise figure NF (dB) 4 3 2 1 0 0.1 1 10 Emitter current IE (mA) SJC00018BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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